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1/11 february 2005 STB80NF03L-04T-1 STB80NF03L-04T n-channel 30 v - 0.0035 ? - 80a d2pak/i2pak stripfet?ii mosfet table 1: general features typical r ds (on) = 0.0035 ? exceptional dv/dt capability 100% avalanche tested description this mosfet is the latest development of stmi- croelectronics unique ?single feature size?? strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalance characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications high current, high speed switching table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d (1) STB80NF03L-04T STB80NF03L-04T-1 30 v 30 v < 0.004 ? < 0.004 ? 80 a 80 a d 2 pak 1 2 3 i 2 pak 1 3 part number marking package packaging STB80NF03L-04Tt4 b80nf03l-04t d 2 pak tape & reel STB80NF03L-04T-1 b80nf03l-04t i 2 pak tube rev. 1
STB80NF03L-04T-1 - STB80NF03L-04T 2/11 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 80a, di/dt 300a/s, v dd =24 v ; t j t jmax. (#) limited by package table 4: thermal data table 5: avalanche characteristics electrical characteristics (t case =25 c unless otherwise specified) table 6: on /off symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain-gate voltage (r gs = 20 k ? ) 30 v v gs gate- source voltage 20 v i d (#) drain current (continuous) at t c = 25 c 80 a i d (#) drain current (continuous) at t c = 100 c 80 a i dm ( ) drain current (pulsed) 320 a p tot total dissipation at t c = 25 c 300 w derating factor 2.0 w/ c dv/dt (1) peak diode recovery voltage slope 2.0 v/ns t stg storage temperature ? 65 to 175 c t j max. operating junction temperature 175 c rthj-case thermal resistance junction-case max 0.5 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 40 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 15 v) 2.3 j symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 11.52.5v r ds(on) static drain-source on resistance v gs = 10 v, i d = 40 a 0.0035 0.004 ? v gs = 5 v, i d = 20 a 0.0065 0.0095 ?
3/11 STB80NF03L-04T-1 - STB80NF03L-04T table 7: dynamic electrical characteristics (continued) table 8: switching on table 9: switching table 10: source drain diode (1) the value is rated according r thj-c and is limited by wire bonding. (2) when mounted on fr-4 board of 1in 2 , 2oz cu, t < 10sec symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15 v , i d = 40 a 100 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 5000 pf c oss output capacitance 1720 pf c rss reverse transfer capacitance 350 pf symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 15 v, i d = 40 a r g =4.7 ? v gs = 5.0 v (see test circuit, figure 3) 40 ns t r rise time 300 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 15 v, i d = 80a, v gs = 10v 120 25 40 168 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd = 15 v, i d = 40 a, r g =4.7 ?, v gs = 5.0v (see test circuit, figure 3) 30 70 ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 80 a i sdm (1) source-drain current (pulsed) 320 a v sd (2) forward on voltage i sd = 80 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100a/s, v dd = 20 v, t j = 150 c (see test circuit, figure 5) 75 140 4 ns nc a
STB80NF03L-04T-1 - STB80NF03L-04T 4/11 figure 3: safe operating area figure 4: output characteristics figure 5: transconductance figure 6: thermal impedance figure 7: transfer characteristics figure 8: static drain-source on resistance
5/11 STB80NF03L-04T-1 - STB80NF03L-04T figure 9: gate charge vs gate-source voltage figure 10: normalized gate thereshold volt- age vs temperature figure 11: capacitance variations figure 12: normalized on resistance vs tem- perature figure 13: normalized bvdss vs temperature
STB80NF03L-04T-1 - STB80NF03L-04T 6/11 figure 14: switching times test circuit for resistive load figure 15: test circuit for diode recovery times figure 16: gate charge test circuit
7/11 STB80NF03L-04T-1 - STB80NF03L-04T to-247 mechanical data 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r0.4 0.015 v2 0 o 4 o d 2 pak mechanical data 3
STB80NF03L-04T-1 - STB80NF03L-04T 8/11 tape and reel shipment (suffix ?t4?)* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
9/11 STB80NF03L-04T-1 - STB80NF03L-04T dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 d 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0.393 0.410 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l2 1.27 1.40 0.050 0.055 to-262 (i 2 pak) mechanical data
STB80NF03L-04T-1 - STB80NF03L-04T 10/11 table 11: revision history date revision description of changes 15-feb-2005 1 first release.
11/11 STB80NF03L-04T-1 - STB80NF03L-04T information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america

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